EE 315 Introduction to Electronic Analysis & Design
Lecture 11: Diodes I: A new circuit element, ideal diodes, first-glance analysis, rectifiers, gates, min/max circuits, super diodes, SPICE models

PN-junctions can be packaged to build diodes.

Diodes:

  • Simplest (physically contstructed at least), fundamental, nonlinear circuit element note that I disagree with Sedra and Smith on this because signum functions or saturated op amps are probably simplier at least in their modeling
  • Nonlinear circuit elements (doesn’t follow Ohm’s law as a line as the I-V relation)
  • Act like voltage controlled valves
  • Polarity matters
  • Two terminals: anode (positive) and cathode (negative)
  • Packaged in epoxy (plastic) or glass

Previous circuit elements were assumed to be linear (Ohmic)

  • Resistors $v=iR$
  • Capacitors (kind of like a frequency dependent resistor)
    • $Z_C = \frac{1}{j\omega C} = \frac{1}{sC}$
    • I-V related by calculus
    • $i_C(t) = C\frac{dv_C}{dt}$
    • $v_C(t)=v_C(t_a) + \frac{1}{C}\int_{t_a}^{t_b}i_C(\tau)d\tau$
  • Inductors (kind of like a frequency dependent resistor)
    • $Z_L = j\omega L = sL$
    • I-V related by calculus
    • $v_L(t) = L\frac{di_L}{dt}$
    • $i_L(t)=i_L(t_a) + \frac{1}{L}\int_{t_a}^{t_b}v_L(\tau)d\tau$

Many important signal processing functions are not linear

  • voltage dependent resistor (think of a resistor that changes as a function of the amplitude that is applied across the terminals)
  • turing AC power supply voltage into a DC power supply rail
  • waveform manipulation (amplitude demodulation, peak-finding, signum, etc.)
  • digital logic and memory circuits (Schmitt trigger has memory/hyestersis for example)
  • saturated op amps (nonlinear)
  • importantly, no physical device is linear in reality and the diode is the first device where its nonlinearity is difficult to ignore in many instances

Comparing I-V curves.

Resistor Diode
$i_R=\frac{v_R}{R}$ $i_D = I_S\bigg(e^{\frac{v_D}{V_T}}-1\bigg)$ (forward active region: $v_D > 0$)
$i_D \approx -I_S$ (reverse biased region: $-v_Z < v_D < 0$)
Voltage source (breakdown region: $-v_Z > v_D$)

Simplifying this behavior leads to the ideal diode model.

  • Forward bias: positive voltage drop gives an approximate short circuit
  • $v_D > 0V \implies R_D = 0 \Omega$
  • Reverse bias: negative voltage drop gives an approximate open circuit
  • $v_D < 0V \implies R_D = \infty \Omega$
  • If a signal passes the break point of $v_D = 0V$, linear analysis is no longer permitted

Simple, first step to analyze circuits with diodes:

  • Is the diode forward or reversed biased? Two approaches to figure it out.
  • Approach 1: Take a KVL to see if $v_D > 0$
  • Approach 2: Find $i_D$ and verify that it is entering the anode (positive terminal) of the diode

Positive logic systems

  • Or gates
  • And gates

Maximum and minimum input voltage circuits

  • Select the voltage maximum as the output: create positive logic ‘or gate’ with various voltages (analog) at the input
    • Convince yourself by taking KVL around a loop with two input voltages
    • The diode in the path with the lower voltage will be reversed biased (off) that effectively disconnects the lower voltages from the circuit
  • Select the voltage minimum as the output: create positive logic ‘and gate’ with various voltages (analog) at the input
    • Convince yourself by taking KVL around a loop with two input voltages
    • The diode in the path with the lower voltage will be forward biased (on) giving a short circuit to ground

Op amp based ‘superdiode’ circuit

SPICE model
.model myDiode D(Is=100pA n=1.679 BV=-10V IBV=-1mA)

Symbol SPICE Name Model Parameter Units Default
$I_S$ Is Saturation current Amps 1E-14
$r_S$ Rs Ohmic resistance $\Omega$ 0
$n$ n Emission coefficient 1
$V_{ZK}$ BV Reverse-bias breakdown voltage Volts $\infty$
$I_{ZK}$ IBV Reverse-bias breakdown current Amps 1E-10